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2SK2767-01
N-CHANNEL SILICON POWER MOSFET
FUJI POWER MOSFET
Outline Drawings
TO-220AB
FAP-2S Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol VDS ID ID(puls] VGS IAR *2 EAS *1 PD Tch Tstg Ratings 900 3.5 14 35 3.5 258 80 +150 -55 to +150 Unit V A A V A mJ W C C < *2 Tch=150C
Equivalent circuit schematic
Drain(D)
Gate(G) Source(S)
*1 L=38.6mH, Vcc=90V
Electrical characteristics (Tc =25C unless otherwise specified)
Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV VSD trr Qrr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=900V VGS=0V VGS=35V VDS=0V ID=2.0A VGS=10V ID=2.0A VDS=25V VDS=25V VGS=0V f=1MHz VCC=600V ID=3.5A VGS=10V RGS=10 L=100 H Tch=25C IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -di/dt=100A/s Tch=25C 3.5 1.0 1000 5.0 1.5 Tch=25C Tch=125C
Min.
900 3.5
Typ.
4.0 10 0.2 10 4.0 2.0 450 75 40 20 40 50 25
Max.
4.5 500 1.0 100 5.5 680 120 60 30 60 80 40
Units
V V A mA nA S pF
1.0
ns
A V ns C
Thermalcharacteristics
Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient
Min.
Typ.
Max.
1.56 75.0
Units
C/W C/W
1
2SK2767-01
Characteristics
Power Dissipation PD=f(Tc)
FUJI POWER MOSFET
Safe operating area
ID=f(VDS):D=0.01,Tc=25C
100 90 80 70
10
1
t=0.01s 1s 10s DC 100s
60
PD [W]
ID [A]
50 40 30
10
0
1ms
10ms 10 20 10 0 10
-2 -1
t D= T t T
100ms
0
50
100
150
10
0
10
1
10
2
10
3
Tc [ C]
o
VDS [V]
Typical transfer characteristic
ID=f(VGS):80s Pulse test,VDS=25V,Tch=25C
10
1
ID [A]
10
0
10
-1
10
-2
0
1
2
3
4
5
6
7
8
9
10
VGS [V]
Typical forward transconductance
gfs=f(ID):80s Pulse test,VDS=25V,Tch=25C
10
1
gfs [s]
10
0
10
-1
10
-1
10
0
10
1
ID [A]
2
2SK2767-01
FUJI POWER MOSFET
16 14
Drain-source on-state resistance RDS(on)=f(Tch):ID=2A,VGS=10V
6.0
Gate threshold voltage VGS(th)=f(Tch):ID=1mA,VDS=VGS
5.0 12 4.0 10 max. typ. min. 3.0
RDS(on) [ ]
8 6
max.
VGS(th) [V]
typ.
2.0
4 1.0 2 0 -50 0 50 100 150
o
0.0
-50
0
50
100
o
150
Tch [ C]
Tch [ C]
Typical gate charge characteristic
VGS=f(Qg):ID=3.5A,Tch=25C
800 Vcc=720V 700 600 500 400 300 200 180V 100 0 40 10n
Typical capacitances C=f(VDS):VGS=0V,f=1MHz
V 80 35 =1 cc 50V V4 0V 72 30
1n 25
VDS [V]
450V
VGS [V]
C [F]
Ciss
20 15
100p 10 5 0 0 10 20 30 40 50 60 70 80 10p 10 Coss Crss
-2
10
-1
10
0
10
1
10
2
Qg [nC]
VDS [V]
Forward characteristic of reverse of diode
IF=f(VSD):80s Pulse test,VGS=0V
300
Avalanche energy derating
Eas=f(starting Tch):Vcc=90V,IAV=3.5A
10
1
250
o
Tch=25 C typ. IF [A]
0
200
10
Eas [mJ]
0.2 0.4 0.6 0.8 1.0 1.2 1.4
150
100 10
-1
50
10
-2
0.0
0
0
50
o
100
150
VSD [V]
Starting Tch [C]
3
2SK2767-01
FUJI POWER MOSFET
10
1
Transient thermal impedance Zthch=f(t) parameter:D=t/T
0 10 D=0.5
Zthch-c [K/W]
0.2 0.1 10
-1
0.05 0.02 0.01 0 10
-4
t D= T t T
10 -5 10
-2
10
-3
10
-2
10
-1
10
0
10
1
t [s]
4

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